Carbon Nanotube Film/Silicon Heterojunction Photodetector for New Cutting-Edge Technological Devices

نویسندگان

چکیده

Photodetector (PD) devices based on carbon nanotube/n-silicon heterojunction (NSH) have been realized, with a linear response in large optical power range, proving competitive performances respect to recent nanostructure-based detector and those currently available the market. The core of these is thin semi-transparent conductive single-walled nanotubes film multitask role: junction element, light absorber transmitter, photocarrier transporting layer, charge collector. PD exhibits rise times some nanoseconds, detecting from ultraviolet (240 nm) infrared (1600 nm), external quantum efficiency reaching 300% VIS spectra region.

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ژورنال

عنوان ژورنال: Applied sciences

سال: 2021

ISSN: ['2076-3417']

DOI: https://doi.org/10.3390/app11020606